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Weihan NI; Yongxiang Liang; Zhu Chen; Edward H. Sargent (2025). Techniques for favoring carbon oxides electroreduction into ethylene. Patent Number: WO2025027390A2. SXRMB Materials
Von Kreudenstein Thomas Spreter; Surjit Bhimarao Dixit; Eric Escobar-Cabrera; David Kai Yuen Poon; Paula Irene Lario et al. (2022). Stable heterodimeric antibody design with mutations in the Fc domain. Patent Number: ES2899956T3.
Von Kreudenstein Thomas Spreter; Surjit Bhimarao Dixit; Eric Escobar-Cabrera; David Kai Yuen Poon; Paula Irene Lario et al. (2021). DESIGN OF STABLE HETERODIMED ANTIBODY WITH MUTATIONS IN THE FC DOMAIN. Patent Number: DK2773671T3.
Von Kreudenstein Thomas Spreter; Surjit Bhimarao Dixit; Eric Escobar-Cabrera; David Kai Yuen Poon; Paula Irene Lario et al. (2021). Stable heterodimeric antibody design with mutations in the fc domain. Patent Number: RS62689B1.
Venu Varanasi; Pranesh Aswath; Philip Kramer; Megen Velten; Azhar Ilyas et al. (2020). Si—O—N—P related fabrication methods, surface treatments and uses thereof. Patent Number: US10828393B2. SGM, SXRMB, VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Philip Kramer; Megen Velten; Azhar Ilyas et al. (2020). Si—O—N—P related fabrication methods, surface treatments and uses thereof. Patent Number: US10828393B2. SGM, SXRMB, VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Philip Kramer; Megen Velten; Azhar Ilyas et al. (2020). Si—O—N—P related fabrication methods, surface treatments and uses thereof. Patent Number: US10828393B2. SGM, SXRMB, VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Megen Maginot; Nickolay V. Lavrik (2025). Amorphous silicon oxide, amorphous silicon oxynitride, and amorphous silicon nitride thin films and uses thereof. Patent Number: US12239765B2.
Venu Varanasi; Pranesh Aswath; Megen Maginot; Nickolay V. Lavrik (2025). Amorphous Silicon Oxide, Amorphous Silicon Oxynitride, and Amorphous Silicon Nitride Thin Films and Uses Thereof. Patent Number: US20250018093A1. VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Megen Maginot; Nickolay V. Lavrick (2021). Amorphous silicon oxide, amorphous silicon oxynitride, and amorphous silicon nitride thin films and uses thereof. Patent Number: US10898618B2. SGM, VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Megen Maginot; Nickolay V. Lavrick (2016). Amorphous Silicon Oxide, Amorphous Silicon Oxynitride, and Amorphous Silicon Nitride Thin Films and Uses Thereof. Patent Number: US20160067387A1. SGM, VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Megen Maginot; Nickolay V. Lavrick (2021). Amorphous silicon oxide, amorphous silicon oxynitride, and amorphous silicon nitride thin films and uses thereof. Patent Number: US10898618B2. SGM, VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Megen Maginot; Nickolay V. Lavrick (2016). Amorphous Silicon Oxide, Amorphous Silicon Oxynitride, and Amorphous Silicon Nitride Thin Films and Uses Thereof. Patent Number: US20160067387A1. SGM, VLS-PGM Materials
T·斯普雷特冯克罗伊登斯泰因; S·B·迪克西特; E·埃斯科巴-卡布雷拉; P·I·拉里奥; D·K·Y·潘 et al. (2024). Stable heterodimeric antibody design with mutations in the Fc domain. Patent Number: CN109897103B.
T.斯普雷特冯克罗伊登斯泰因; S.B.迪克西特; E.埃斯科巴-卡布雷拉; P.I.拉里奥; D.K.Y.潘 et al. (2019). Antibody design for stable heterodimerization with mutations in the Fc domain. Patent Number: CN104080811B.