Publication Beamlines Strategic Pillar
Zonghua PU; Gaixia Zhang; Shuhui Sun (2023). Single-atom catalysts and method of manufacture thereof. Patent Number: US20230366111A1. HXMA, SGM Materials
Zonghua PU; Gaixia Zhang; Shuhui Sun (2023). Single-atom catalysts and method of manufacture thereof. Patent Number: US20230366111A1. HXMA, SGM Materials
Yuhang Wang; Edward Sargent (2020). Electrocatalysts synthesized under co2 electroreduction and related methods and uses. Patent Number: WO2020225315A1. HXMA Materials
Yang Shao-Horn; Yuriy ROMAN; Denis Kuznetsov; Livia Giordano; Jiayu PENG et al. (2019). Perovskites for catalyzing oxygen evolution. Patent Number: WO2019245929A1. REIXS Materials
Yang Shao-Horn; Koffi Pierre Claver Yao; Fanny Barde (2018). Rechargeable electrochemical system using transition metal promoter. Patent Number: US20180048042A1. SGM, SXRMB Materials
Yang Shao-Horn; Koffi Pierre Claver Yao; Fanny Barde (2018). Rechargeable electrochemical system using transition metal promoter. Patent Number: US20180048042A1. SGM, SXRMB Materials
William Diamond; Vinay NAGARKAL; Mark de JONG; Christopher REGIER; Linda Lin et al. (2014). Production of molybdenum-99 using electron beams. Patent Number: US20140348284.
Venu Varanasi; Pranesh Aswath; Philip Kramer; Megen Velten; Azhar Ilyas et al. (2020). Si—O—N—P related fabrication methods, surface treatments and uses thereof. Patent Number: US10828393B2. SGM, SXRMB, VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Philip Kramer; Megen Velten; Azhar Ilyas et al. (2020). Si—O—N—P related fabrication methods, surface treatments and uses thereof. Patent Number: US10828393B2. SGM, SXRMB, VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Philip Kramer; Megen Velten; Azhar Ilyas et al. (2020). Si—O—N—P related fabrication methods, surface treatments and uses thereof. Patent Number: US10828393B2. SGM, SXRMB, VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Megen Maginot; Nickolay V. Lavrick (2021). Amorphous silicon oxide, amorphous silicon oxynitride, and amorphous silicon nitride thin films and uses thereof. Patent Number: US10898618B2. SGM, VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Megen Maginot; Nickolay V. Lavrick (2016). Amorphous Silicon Oxide, Amorphous Silicon Oxynitride, and Amorphous Silicon Nitride Thin Films and Uses Thereof. Patent Number: US20160067387A1. SGM, VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Megen Maginot; Nickolay V. Lavrick (2021). Amorphous silicon oxide, amorphous silicon oxynitride, and amorphous silicon nitride thin films and uses thereof. Patent Number: US10898618B2. SGM, VLS-PGM Materials
Venu Varanasi; Pranesh Aswath; Megen Maginot; Nickolay V. Lavrick (2016). Amorphous Silicon Oxide, Amorphous Silicon Oxynitride, and Amorphous Silicon Nitride Thin Films and Uses Thereof. Patent Number: US20160067387A1. SGM, VLS-PGM Materials
Thomas SPRETER VON KREUDENSTEIN; Surjit Bhimarao Dixit; Paula Irene Lario; Eric Escobar-Cabrera; Martin J. BOULANGER et al. (2023). Crystal structures of heterodimeric fc domains. Patent Number: CA2889951C. CMCF-BM Health