Publication Beamlines Strategic Pillar
Ben-Barak, Ido; Obrovac, M. N. (2024). All-Dry Synthesis of NMC from [Ni,Mn,Co]3O4 Spinel Precursors. Journal of the Electrochemical Society 171(4) , 040535. 10.1149/1945-7111/ad3aa9. BXDS-WLE Materials
Brixi, Samantha; Radford, Chase L.; Tousignant, Mathieu N.; Peltekoff, Alexander J.; Manion, Joseph G. et al. (2022). Poly(ionic liquid) Gating Materials for High-Performance Organic Thin-Film Transistors: The Role of Block Copolymer Self-Assembly at the Semiconductor Interface. ACS Applied Materials and Interfaces 14(35) . 10.1021/acsami.2c07912. BXDS-WLE Materials
Charchi Aghdam, Nazanin; Chen, Ning; Soltan, Jafar (2023). Ozonative epoxidation of ethylene: A novel process for production of ethylene oxide. Applied Catalysis A: General 661, 119239. 10.1016/j.apcata.2023.119239. BXDS-WLE, HXMA Materials
Cheng, H. Y.; Chien, W C.; Kuo, I. T.; Yang, C. H.; Chou, Y. C. et al. (2021). Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory. . 10.1109/iedm19574.2021.9720704. BXDS-WLE Materials
Cheng, H. Y.; Grun, A.; Chien, W C.; Yeh, C. W.; Ray, A. et al. (2022). New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low Vth Drift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project. . 10.1109/iedm45625.2022.10019562. BXDS-WLE Materials
Cheng, H. Y.; Liu, Z. L.; Majumdar, A.; Grun, A.; Ray, A. et al. (2024). State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing Applications. . , 1-2 10.1109/vlsitechnologyandcir46783.2024.10631376. BXDS-WLE Materials
Chen, Hao; Maxwell, Aidan; Li, Chongwen; Teale, Sam; Chen, Bin et al. (2022). Regulating surface potential maximizes voltage in all-perovskite tandems. Nature . 10.1038/s41586-022-05541-z. BXDS-WLE Materials